JPS6192061U - - Google Patents

Info

Publication number

JPS6192061U

JPS6192061U JP17801884U JP17801884U JPS6192061U JP S6192061 U JPS6192061 U JP S6192061U JP 17801884 U JP17801884 U JP 17801884U JP 17801884 U JP17801884 U JP 17801884U JP S6192061 U JPS6192061 U JP S6192061U

Authority

JP

Japan

Prior art keywords

layer

impurity diffusion

contact hole

diffusion layer

semiconductor device

Prior art date

1984-11-22

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• 238000009792 diffusion process Methods 0.000 claims description 6
• 239000012535 impurity Substances 0.000 claims description 6
• 239000004065 semiconductor Substances 0.000 claims description 5
• 238000002955 isolation Methods 0.000 claims description 4
• 238000010586 diagram Methods 0.000 description 5
• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
• 229910052814 silicon oxide Inorganic materials 0.000 description 3
• 229910004298 SiO 2 Inorganic materials 0.000 description 1
• LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1